|
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| Low
Power Design Platform |
| Target |
Methodology
|
Implementation
and Verification |
|
Leakage
Power
Reduction |
PSO |
Power
Shut Down
|
‧external
power shutdown
‧customized low leakage I/O power switch |
| Power
Gating |
‧coarse
grain MTCMOS
‧rush current analysis / decap cell insertion
‧isolation cell insertion & verification
‧data retention (FF and memory) |
Multi-VT
|
‧multi-VT
libraries optimization |
Dynamic
Power
Reduction |
Low
power CTS |
‧clock
gating clone/de-clone
‧inverter tree & peak power mitigation |
| Multiple
Supply Voltage |
‧multiple
voltage library characterization
‧voltage islands with level shifter insertion |
DVFS
|
‧power
mode verification/optimization
‧dynamic clock tree balance
‧synchronization logic across power domains |
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Mass production proven in
130nm/90nm/65nm designs
Over 30 chips tape-out successfully |
Comprehensive
low power solution
- Leakage power reduction
- Dynamic power reduction
- Low power design verification
|
Proprietary low
power methodology
- Power-aware DFT
- Yield-aware dynamic IR prevention
- Power gating rush current reduction
|
|
| |
- Low Power Design Success Story
|
Process |
Gate Count |
Clock
Freq. |
Application |
Methodology
|
Status |
|
| 1P6M,
0.13um |
2M |
380
MHz
|
Cell
phone
|
PSO+multi-VT+MSV |
Mass
Production |
| 1P6M,
90nm |
1M |
200
MHz |
DTV
on cell hone |
PSO+multi-VT+power
switch
|
Mass
Production |
1P7M,
90nm
|
2M |
200
MHz
|
Cell
phone |
PSO+multi-VT+customized
IO
|
Risk
Production |
| 1P7M,
65nm |
10M |
300
MHz
|
Video |
PSO+multi-VT+low
power library
|
Risk
Production |
| 1P6M,
65nm |
1.5M |
200
MHz |
Cell
phone |
PSO+multi-VT+MSV |
Risk
Production |
| 1P7M,
65nm |
8M |
300
MHz |
Video |
PSO+multi-VT+DVFS+data
retention |
Q4/2008 |
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